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FDC6306P Complex FET -20V -1.9A SOT-163/SOT23-6/SSOT-6 marking 306 DC/ DC converter load switch motor drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-8V
最大漏极电流Id
Drain Current
-1.9A
源漏极导通电阻Rds
Drain-Source On-State Resistance
250mΩ@ VGS = -2.5V, ID = -1.7A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.4~-1.5V
耗散功率Pd
Power Dissipation
960mW/0.96W
Description & ApplicationsDual P-Channel 2.5V Specified Power Trench MOSFET General Description These P-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Applications • Load switch • DC/DC converter • Motor driving Features • Low gate charge (3.5nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON) • SuperSOTTM-6 package: small footprint
描述与应用双P沟道2.5V额定功率沟道MOSFET 概述 这些P沟道低阈值2.5V指定的MOSFET采用飞兆半导体先进的功率沟槽进程,已特别是针对减少通态电阻,但维持出色的开关性能低栅极电荷。 应用 •负荷开关 •DC/ DC转换器 •电机驱动 特点 •低栅极电荷(3.5nC典型值)。 •快速开关速度。 •高性能沟道技术极低的RDS(ON) •SuperSOTTM-6包装:占地面积小
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