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FDC633N MOSFET N-Channel 30V 5.2A SOT-163/SOT23-6 marking 633 no secondary breakdown/fast switch/high input impedance
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 5.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 54mΩ@ VGS = 2.5V, ID =4.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4~1V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching,low in-line power loss and resistance to transients are needed in a very small outline surface mount package. Features SuperSOT-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability. |
| 描述与应用 | N沟道增强型场效应晶体管 概述 这N沟道增强型功率场效应晶体管的生产采用飞兆半导体专有的，高细胞密度，DMOS技术。这非常高密度的过程是量身定做，以尽量减少通态电阻。这些器件特别适合于低电压应用在笔记本电脑，便携式电话，PCMICA卡和其他电池供电电路中快速开关，低线的功率损耗和抗瞬变都需要在一个非常小外形表面贴装封装。 特点 的SuperSOT-6包装设计采用铜引线框架的卓越的热性能和电气性能。 高密度电池设计极低的RDS（ON） 卓越的导通电阻和最大DC电流能力。 |
