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FDC634P MOSFET P-Channel -20V -350mA 0.07ohm SOT-163 marking 634
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -350mA/-0.35A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.07Ω @-250mA,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4--1V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | TM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability |
| 描述与应用 | TM-6包装设计采用铜引线框架的 卓越的热性能和电气性能。 高密度电池设计极低的RDS（ON） 卓越的导通电阻和最大DC电流能力 |
