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FDD8896 MOSFET N-Channel 30V 9.4A TO-252/D-PAK marking 8896 low on-resistance/ultra highspeed switch/4Vdriver
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 9.4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.0057Ω/Ohm @3.5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2-2.5V |
| 耗散功率Pd Power Dissipation | 80W |
| Description & Applications | N-Channel PowerTrench ®MOSFET 30V, 94A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features • rDS(ON) = 5.7mW, VGS = 10V, ID = 35A • rDS(ON)= 6.8mW, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low DS(ON) • Low gate charge • High power and current handling capability |
| 描述与应用 | N-沟道PowerTrench®MOSFET 30V，94A，5.7mΩ 概述 这N沟道MOSFET已专门设计 提高整体效率的DC / DC转换器 同步或传统开关PWM 控制器。它已被优化的低门电荷，低 RDS（ON）和快速开关速度。 •高性能沟道技术极低 DS（ON） •低栅极电荷 •高功率和电流处理能力 |
