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FDG6316P Complex FET -12V -700mA/0.7A SOT-363/SC70-6 marking 16 battery management load switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-12V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-8V
最大漏极电流Id
Drain Current
-700mA/0.7A
源漏极导通电阻Rds
Drain-Source On-State Resistance
650mΩ@ VGS = -1.8V, ID = -0.4A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.4~-1.5V
耗散功率Pd
Power Dissipation
300mW/0.3W
Description & ApplicationsP-Channel 1.8V Specified Power Trench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch Features • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package
描述与应用P沟道1.8V额定功率沟道MOSFET 概述 此P沟道MOSFET的1.8V指定使用飞兆半导体先进的低电压功率沟槽过程。它已被优化的电池电源管理应用。 应用 •电池管理 •负荷开关 特点 •低栅极电荷 •高性能沟道技术极低的RDS(ON) •紧凑型工业标准SC70-6表面贴装封装
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