Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
FDJ1028N Complex FET 20V 3.2A SOT-563 marking F3 battery management
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 3.2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 130mΩ@ VGS = 2.5V, ID =2.7A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6~1.5V |
| 耗散功率Pd Power Dissipation | 1.5W |
| Description & Applications | N-Channel 2.5 Vgs Specified Power Trench MOSFET General Description This dual N-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Applications Battery management Features Low gate charge High performance trench technology for extremely low RDS(ON) FLMP SC75 package: Enhanced thermal performance in industry-standard package size |
| 描述与应用 | N沟道2.5 VGS额定功率沟槽MOSFET 概述 这种双N沟道2.5V指定的MOSFET采用飞兆半导体先进的低电压的PowerTrench过程。 FLMP SC75封装，RDS（ON）和热性能的设备进行了优化，电池电源管理应用。 应用 电池管理 特点 低栅极电荷 高性能沟道技术极低的RDS（ON） FLMP SC75封装：增强热表现在行业标准包装尺寸 |
