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FDN306P MOSFET P-Channel -12V -2.6A 0.003ohm SOT-23 marking 306
| 最大源漏极电压Vds Drain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -2.6A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.003Ω @-2.6A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4--1.5V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOT TM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint |
| 描述与应用 | •开关速度快 •高性能沟道技术极 低RDS（ON） •的SuperSOT TM-3提供低RDS（ON）和30％上 在相同的空间比SOT23封装的功率处理能力 |
