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FDN306P MOSFET P-Channel -12V -2.6A 0.003ohm SOT-23 marking 306

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-12V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-2.6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.003Ω @-2.6A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.4--1.5V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & Applications• Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOT TM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
描述与应用•开关速度快 •高性能沟道技术极 低RDS(ON) •的SuperSOT TM-3提供低RDS(ON)和30%上 在相同的空间比SOT23封装的功率处理能力
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