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FDN340P MOSFET P-Channel -20V -2A 0.052ohm SOT-23 marking 340

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.052Ω @-2A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.4--1.5V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & ApplicationsLow gate charge (8nC typical). High performance trench technology for extremely low RDS(ON) . High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.
描述与应用低栅极电荷(典型8NC)。 高性能沟道技术极 低RDS(ON)。 高功率版本的行业标准SOT-23 包。相同的引脚的SOT-23与30% 更高的功率处理能力
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