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FDN340P MOSFET P-Channel -20V -2A 0.052ohm SOT-23 marking 340
最大源漏极电压Vds Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
最大漏极电流Id Drain Current | -2A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.052Ω @-2A,-4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.4--1.5V |
耗散功率Pd Power Dissipation | 500mW/0.5W |
Description & Applications | Low gate charge (8nC typical). High performance trench technology for extremely low RDS(ON) . High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. |
描述与应用 | 低栅极电荷(典型8NC)。 高性能沟道技术极 低RDS(ON)。 高功率版本的行业标准SOT-23 包。相同的引脚的SOT-23与30% 更高的功率处理能力 |