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FDY300NZ MOSFET N-Channel 20V 600mA/0.6A SOT-523 marking CHD high thermal performance/highelectronic performance/low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 600mA/0.6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.70Ω/Ohm 600mA,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6-1.5V |
| 耗散功率Pd Power Dissipation | 625mW/0.625W |
| Description & Applications | Single N-Channel 2.5V Specified PowerTrench MOSFET General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductors advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. · ESD protection diode (note 3) · RoHS Compliant |
| 描述与应用 | 单N沟道2.5V指定的PowerTrench MOSFET 概述 这单N沟道MOSFET已设计 采用飞兆半导体先进的功率？ 海沟过程优化的RDS（ON）@ VGS=2.5V。 ·ESD保护二极管（3） ·符合RoHS标准 |
