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FMMTL717TA PNP transistors(BJT) -12V -1.25A 205MHz 180~275 -200mV/-0.2V SOT-23 marking L77 low saturation voltage/low equivalent on-resistance
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -12V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -12V |
集电极连续输出电流IC Collector Current(IC) | -1.25A |
截止频率fT Transtion Frequency(fT) | 205MHz |
直流电流增益hFE DC Current Gain(hFE) | 180~275 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −200mV/-0.2V |
耗散功率Pc PoWer Dissipation | 500mW/0.5W |
Description & Applications | PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR MEDIUM POWER TRANSISTOR FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A |
描述与应用 | PNP硅平面高增益 中等功率晶体管 特点 非常低的等效导通电阻 |