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FSB619 NPN Transistors(BJT) 50V 2A 100MHz 300 320mV/0.32V SOT-23/SC-59 marking 619 lowsaturated
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 2A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 300 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 320mV/0.32V |
耗散功率Pc Power Dissipation | 500mW/0.5W |
Description & Applications | NPN Low Saturation Transistor high current gain |
描述与应用 | NPN低饱和晶体管 高电流增益 |