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FZT1147ATA PNP transistors(BJT) -15V -5A 115MHz 150~245 -250mV/-0.25V SOT-223 marking FZT1147A high gain /low saturation voltage
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -15V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -12V |
集电极连续输出电流IC Collector Current(IC) | -5A |
截止频率fT Transtion Frequency(fT) | 115MHz |
直流电流增益hFE DC Current Gain(hFE) | 150~245 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -250mV/-0.25V |
耗散功率Pc PoWer Dissipation | 2.5W |
Description & Applications | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES * VCEO= -12V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain |
描述与应用 | PNP硅平面中功率高增益晶体管 特点 * VCEO=-12V *5安培连续电流 *20安培脉冲电流 *低饱和电压 *增益高 |