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FZT749 PNP transistors(BJT) -35V -3A 100MHz 100~300 -600mV/-0.6V SOT-223 marking FZT749 high current gain/low saturation voltage
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -35V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −25V |
集电极连续输出电流IC Collector Current(IC) | -3A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 100~300 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −600mV/-0.6V |
耗散功率Pc PoWer Dissipation | 2W |
Description & Applications | PNP Low Saturation Transistor High current gain and low saturation voltage |
描述与应用 | 低饱和PNP晶体管 高电流增益和低饱和电压 |