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FZT789ATA PNP transistors（BJT） -25V -3A 100MHz 300~800 -500mV/-0.5V SOT-223 marking FZT789A medium power high gain
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -25V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −25V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 300~800 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 2W |
| Description & Applications | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES Extremely Low equivalent on-resistance COMPLEMENTARY TYPE FZT688B APPLICATIONS Battery powered circuits，fast charge converters |
| 描述与应用 | PNP硅平面中功率高增益晶体管 特点 极低的等效导通电阻 互补型FZT688B的 应用 电池供电电路，快速充电转换器 |
