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FZT851TA NPN Transistors(BJT) 150V 6A 130MHz 100~300 375mV/0.375V SOT-223 marking FZT851 high current (high performance )

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
150V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
60V
集电极连续输出电流IC
Collector Current(IC)
6A
截止频率fT
Transtion Frequency(fT)
130MHz
直流电流增益hFE
DC Current Gain(hFE)
100~300
管压降VCE(sat)
Collector-Emitter Saturation Voltage
375mV/0.375V
耗散功率Pc
Power Dissipation
3W
Description & ApplicationsSOT223 NPN SILICON PLANAR HIGH CURRENT(HIGH PERFORMANCE) TRANSISTORS Extremely low equivalent on-resistance; RCE(sat) =44mΩ at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps
描述与应用SOT223 NPN硅平面高电流(高性能)晶体管 极低的等效导通电阻;在5A时RCE(饱和)=44mΩ 6安培连续电流,高达20安培的峰值电流 极低的饱和电压 优秀HFE 高达10安培的特性
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