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GN1010-R MESFET-N channel 6V 25mA-45mA SOT-143 marking 5AR RF application/low noise
最大源漏极电压Vds Drain-Source Voltage | 6V |
栅源极击穿电压V(BR)GS Gate-Source Voltage | -4V |
漏极电流(Vgs=0V)IDSS Drain Current | 25mA-45mA |
关断电压Vgs(off) Gate-Source Cut-off Voltage | |
耗散功率Pd Power Dissipation | 200mW/0.2W |
Description & Applications | GaAs N-Channel MES For high-output high-gain amplification General-use wide-band amplifier Low noise With bandwidth control pin |
描述与应用 | 砷化镓N沟道MES 用于高输出的高增益放大 一般使用的宽带放大器 低噪音 随着带宽控制引脚 |