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GN1F4N-T1 PNP Bipolar Digital Transistor (BRT) -60V -100mA/-0.1A 85~340 0.15W/150mW SOT-323/SC-70 marking M35 switch inverter interface driver circuit
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.47 |
| 直流电流增益hFE DC Current Gain(hFE) | 85~340 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | Feature •silicon transistor •medium speed switching resistor built-in type PNP transistor •resistor built-in type •complementary to GA1F4N |
| 描述与应用 | 特点 •硅晶体管 •中速开关电阻器内置型PNP晶体管 •电阻器内置型 •GA1F4N互补 |
