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HAT2160H n MOSFET 20V 60A LFPAK Low on-resistance Low drive currt en
| Drain-Source Voltage （Vds） | 20V |
|
Vgs(±) Gate-Source Voltage |
20V |
| Drain Current （Id） | 60A |
| Drain-Source On-State （Rds） | ID = 30 A, VGS = 10 V RDS=2.1~2.6mΩ
ID = 30 A, VGS = 4.5 V RDS=2.8~4.1mΩ
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Vgs （th） Gate-Source Threshold Voltage |
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| Power dissipation （Pd） | 30W |
| Description & Applications | Silicon N Channel Power MOS FET
Power Switching
• Capable of 4.5 V gate drive
• Low drive currt en
• High density mounting
• Low on-resistance
RDS(on) = 2.1 mΩ typ. (at VGS = 10 V)
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