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HMBT2907A PNP transistors（BJT） -60V -600mA/- 0.6A 200MHz 100~300 -1.6V SOT-23/SC-59 marking 2F general amplifier/highspeed switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流IC Collector Current(IC) | −600mA/- 0.6A |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1.6V |
| 耗散功率Pc PoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor Description The HMBT2907A is designed for general purpose amplifier and high speed switching, medium power switching applications. Features • Low Collector Saturation Voltage • High Speed Switching • Complementary toHMBT2222A |
| 描述与应用 | PNP外延平面晶体管 描述 HMBT2907A为通用放大器和高速切换，中等功率开关应用而设计的。 特点 •低集电极饱和电压 •高速开关 •互补型toHMBT2222A |
