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HN1C03F-B NPN+NPN Complex Bipolar Transistor 50V 0.3A HEF=350~1200 SOT-163/SM6/SOT-26 marking C3B switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
50V |
|
V(BR) CEO Collector-Emitter Voltage |
20V |
| Collector Current(IC) | 300MA |
| Transtion Frequency(fT) | 30MHZ |
| DC Current Gain(hFE) | 350~1200 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
0.1V |
| Power Dissipation （Pd） | 300MW/0.3W |
| Description & Applications | Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) • Including two devices in SM6 (Super mini type with 6 leads) • High emitter-base voltage: VEBO = 25V (min) • High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA) • Low on resistance: RON = 1Ω (typ.)(IB = 5mA) • For Muting And Switching Applications |
| Technical Documentation Download | Read Online |
