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HN4A06J PNP+PNP Complex Bipolar Transistor -120V -100mA HEF=200~700 SOT-153/SMV marking 53 switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
-120V |
|
V(BR) CEO Collector-Emitter Voltage |
-120V |
| Collector Current(IC) | -0.1A |
| Transtion Frequency(fT) | 100MHZ |
| DC Current Gain(hFE) | 200~700 |
|
VCE(sat) Collector-Emitter Saturation Voltage |
-0.3V |
| Power Dissipation (Pd) | 0.3W |
| Description & Applications | Features• TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)• High voltage : VCEO = −120V • High hFE : hFE = 200~700 • Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) • Audio Frequency General Purpose Amplifier |
| Technical Documentation Download | Read Online |
