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HN9C01FE NPN+NPN Complex Bipolar Transistor 20V 15mA/80mA 50~160/80~240 SOT-563/ES6 marking WX switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
20V / 20V |
|
V(BR) CEO Collector-Emitter Voltage |
8V / 12V |
| Collector Current(IC) | 15mA / 80mA |
| Transtion Frequency(fT) | 10GHZ / 7GHZ |
| DC Current Gain(hFE) | 50~160 / 80~240 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
|
| Power Dissipation （Pd） | 0.1W |
| Description & Applications | Features • TOSHIBA Transistor Silicon NPN Epitaxial Type • Two devices are built in to the super-thin and extreme super mini(6 pins) package :ES6 2SC5096+2SC5086 |
| Technical Documentation Download | Read Online |
