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IRF6607TR1 MOSFET N-Channel 20V 9.4A MT marking low gate chargefast switch
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 9.4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 6.3Ω/Ohm @15A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3-2.0V |
| 耗散功率Pd Power Dissipation | 3.6W |
| Description & Applications | HEXFETPower MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques |
| 描述与应用 | HEXFET功率MOSFET 特殊应用的MOSFET 非常适于CPU核心的DC-DC转换器 低传导损耗 高CDV/ dt抗扰性 薄型（<0.7毫米） 双面冷却双兼容 与现有的表面兼容 安装技术 |
