Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
IRLML6402TR MOSFET P-Channel -3.7A 0.065ohm SOT-23 marking EC/E4/E1/EB/E7/E3 ultra low on-resistance low profile
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -12V |
| 最大漏极电流Id Drain Current | -3.7A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.065Ω @-3.7A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.40--0.95V |
| 耗散功率Pd Power Dissipation | 1.3W |
| Description & Applications | Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching |
| 描述与应用 | 超低导通电阻 P沟道MOSFET SOT-23的脚印 薄型（高度<1.1mm） 可在磁带和卷轴 快速切换 |
