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IRLR3410TRR MOSFET N-Channel 1.7A TO-252/D-PAK marking LR3410 logic level operating/built-in overtemperature shutdown circuit
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 16V |
| 最大漏极电流Id Drain Current | 1.7A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.105Ω/Ohm 10A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.0V |
| 耗散功率Pd Power Dissipation | 7.9W |
| Description & Applications | HEXFET® Power MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Logic Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR3410) Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated |
| 描述与应用 | HEXFET®功率MOSFET 第五代HEXFETs国际整流器利用先进的加工技术，以达到 最低的导通电阻每硅片面积。这的好处，结合快速开关速度和 坚固耐用的设备的设计，HEXFET功率MOSFET是众所周知的，提供设计师 在各种各样的应用中使用了一个非常有效的移动设备。 D-PAK是专为表面安装使用气相，红外或波峰焊技术。 直引线型（IRFU系列）是通孔安装的应用程序。功耗水平 有可能在典型的表面贴装应用到1.5瓦。 逻辑电平栅极驱动 超低导通电阻 表面贴装（IRLR3410） 直铅（IRLU3410） 先进的工艺技术 快速切换 |
