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IRLR8103VTR MOSFET N-Channel 30V 9.1A TO-252/D-PAK marking LR8103V low on-resistance/Low drive current/high density mounting
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 9.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 6.9Ω/Ohm @15A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-3.0V |
| 耗散功率Pd Power Dissipation | 115W |
| Description & Applications | • N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current a pplications • 100% RG Tested • Lead-Free |
| 描述与应用 | HEXFET功率MOSFET 高频同步降压 计算机处理器电源转换器 高频隔离DC-DC 同步整流转换器 电信和工业应用 •N沟道特定应用的MOSFET •非常适于CPU核心DC-DC转换器 •低传导损耗 •低开关损耗 •最大限度地减少并行 MOSFET的大电流 应用程序 •100％的Rg测试 •无铅 |
