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KST63 PNP transistors(BJT) -30V -500mA/-0.5A 125MHz 10000 -1.5V SOT-23/SC-59 marking 2U
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −30V |
集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
截止频率fT Transtion Frequency(fT) | 125MHz |
直流电流增益hFE DC Current Gain(hFE) | 10000 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -1.5V |
耗散功率Pc PoWer Dissipation | 350mW/0.35W |
Description & Applications | PNP epitaxial planar transistor Darlington Transistor |
描述与应用 | PNP外延平面晶体管 达林顿晶体管 |