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KTD1003-B NPN Transistors(BJT) 60V 1A 150MHz~250MHz 800~3200 170mV~300mV SOT-89 marking LB high current application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 截止频率fT Transtion Frequency(fT) | 150MHz~250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 800~3200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 170mV~300mV |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | HIGH CURRENT APPLICATION. hight DC current gain:hfe=800~3200 wide area of safe operation low collector saturation voltage |
| 描述与应用 | 高电流应用。 高度直流电流增益：HFE=800〜3200 安全工作区广 低集电极饱和度电压 |
