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KTD1898-Y NPN Transistors(BJT) 100V 1A 100MHz 70~400 400mV/0.4V SOT-89 marking ZY
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 100V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 80V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 70~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTB1260. |
| 描述与应用 | 1W（安装在陶瓷基板）。 小型扁平包装。 KTB1260互补。 |
