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KTD1898-Y NPN Transistors(BJT) 100V 1A 100MHz 70~400 400mV/0.4V SOT-89 marking ZY

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
100V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
80V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
70~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
400mV/0.4V
耗散功率Pc
Power Dissipation
Description & Applications1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTB1260.
描述与应用1W(安装在陶瓷基板)。 小型扁平包装。 KTB1260互补。
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