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KTX101U-GR-RTK NPN+PNP Complex Bipolar Transistor 60V/-60V 150mA/-150mA 120~400 SOT-363/US6 marking B6 switch and digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)60V/-60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V/-50V
集电极连续输出电流IC Collector Current(IC)150mA/-150mA
截止频率fT Transtion Frequency(fT)80MHz
直流电流增益hFE DC Current Gain(hFE)120~400
管压降VCE(sat) Collector-Emitter Saturation Voltage100mV/-100mV
耗散功率Pc Power Dissipation200mW
Description & ApplicationsFeatures •EPITAXIAL PLANAR NPN/PNP TRANSISTOR •Including two devices in US6.(Ultra Super mini type with 6 leads) •Simplify circuit design. •Reduce a quantity of parts and manufacturing process. •GENERAL PURPOSE APPLICATION.
描述与应用特点 •外延平面NPN/ PNP晶体管 •在US6包括两个设备(超超级迷你型6引线) •简化电路设计。 •减少了部件数量和制造工艺。 •通用应用。
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