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MBT35200MT1 PNP Transistor -55V -2A HEF=100~400 SOT-163 marking G4 switch and digital circuit application

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Product description

V(BR)CBO

Collector-Base Voltage

 -55V

V(BR)CEO

Collector-Emitter Voltage

 -35V
Collector Current(IC)  -2A
Transtion Frequency(fT)  100MHZ
DC Current Gain(hFE)  100~400

VCE(sat)

Collector-Emitter Saturation Voltage

 -0.31V

Power dissipation (Pd)

 620MW/0.62W
Description & Applications  High Current Surface
Mount PNP Silicon
Switching Transistor for
Load Management in
Portable Applications
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