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MCH5801 complex FET MOSFET+schottky diode 20V 1.5A 500mA/0.5A 0.35V SOT-353/SC70-5/MCPH5 marking QA DC-DC converter/low on-resistance/ultra high-speed switch/short reverse recovery time/low forward voltage
最大源漏极电压Vds Drain-Source Voltage | N沟道 N-Channel |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 10V |
源漏极导通电阻Rds Drain-Source On-State Resistance | 1.5A |
开启电压Vgs(th) Gate-Source Threshold Voltage | 210mΩ@ VGS =4V, ID =1A |
耗散功率Pd Power Dissipation | 0.4~1.3V |
Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
描述与应用 | 15V |