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MCH6630 Complex FET 30V 700mA/0.7A SOT-363/SC70-6/MCPH6 marking WE ultra high-speed switch 1.5V drive
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 700mA/0.7A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 2.4Ω@ VGS =1.5V, ID =10mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4~1.3V |
| 耗散功率Pd Power Dissipation | 800mW/0.8W |
| Description & Applications | General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.5V drive. • High resistance to damage from ESD (TYP 300V).[with a protection diode connected between the gate and source] • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. |
| 描述与应用 | 通用开关设备应用 特点 •低导通电阻。 •超高速开关。 •1.5V驱动。 •高抗ESD损害（TYP300V）[栅极和源极之间的连接与保护二极管] •复合型2包含在一个单一的包装，促进高密度安装MOSFET。 |
