MGF1902B MESFET-N channel -6V 30mA-100mA -0.3V -- -3.5V GD-16 marking GJ RF application/low noise|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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MGF1902B MESFET-N channel -6V 30mA-100mA -0.3V -- -3.5V GD-16 marking GJ RF application/low noise

Model：MGF1902B
Mark / screen / code / typing：GJ
Manufacturer：
Date Code：05+
Package：GD-16
Standard Package：1000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-6V
栅源极击穿电压V(BR)GS Gate-Source Voltage	-6V
漏极电流(Vgs=0V)IDSS Drain Current	30mA-100mA
关断电压Vgs(off) Gate-Source Cut-off Voltage	-0.3V -- -3.5V
耗散功率Pd Power Dissipation	360mW/0.36W
Description & Applications	Type carrier low noise GaAs FET S to X band low noise amplifiers and oscillators Low noise figure High associated gain
描述与应用	载波低噪声砷化镓场效应管类型 S到X波段低噪声放大器和振荡器低噪声系数高相关增益

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