Scavenging browsing Mobile
Hot Search: SSM3K35MFV SSM3J36MFV 2SK3376TT-B
MGF4931AM-01 MESFET-N channel -3V 10mA-60mA -0.1V -- -1.5V SOT-343 marking AT RF application/low noise
最大源漏极电压Vds Drain-Source Voltage | -3V |
栅源极击穿电压V(BR)GS Gate-Source Voltage | -4V |
漏极电流(Vgs=0V)IDSS Drain Current | 10mA-60mA |
关断电压Vgs(off) Gate-Source Cut-off Voltage | -0.1V -- -1.5V |
耗散功率Pd Power Dissipation | 50mW |
Description & Applications | Super low noise GaAs HEMT X to Ku band low noise amplifiers Low noise figure High associated gain |
描述与应用 | 超低噪音砷化镓 HEMT X到Ku波段低噪声放大器 低噪声系数 高相关增益 |