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MJD200T4 NPN Transistors(BJT) 40V 5A 65MHz 10~180 0.3V~1.8V TO-252/DPAK marking J200 power
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流IC Collector Current(IC) | 5A |
| 截止频率fT Transtion Frequency(fT) | 65MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 10~180 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 0.3V~1.8V |
| 耗散功率Pc Power Dissipation | 12.5W |
| Description & Applications | Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Collector−Emitter Sustaining Voltage − VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain − hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc • High Current−Gain − Bandwidth Product − fT = 65 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakage − ICBO = 100 nAdc @ Rated VCB • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V • Pb−Free Packages are Available |
| 描述与应用 | 互补塑料 功率晶体管 NPN/ PNP硅表面DPAK 安装应用 集电极 - 发射极电压 - VCEO（SUS） = 25 VDC（最小）@ IC= 10 MADC •高直流电流增益 - HFE=70（分钟）@ IC= 500 MADC =45（最小）@ IC= 2 ADC =10（最小）@ IC= 5 ADC •铅形成表面贴装塑料套中的应用 （没有后缀） •低集电极 - 发射极饱和电压 - VCE（星期六）= 0.3 VDC（最大）@ IC=500 MADC = 0.75 VDC（最大）@ IC= 2.0 ADC •高电流增益 - 带宽积 - FT =65兆赫（最小）@ IC=100 MADC •低漏电流的环形施工 - ICBO=100 NADC额定VCB •环氧会见UL 94 V-0@0.125 •ESD额定值：人体模型，3B？ 8000 V 机器型号，C？ 400 V •无铅包可用 |
