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MMBFJ175LT1 JFET P-Channel 25 V －7.0~－60.0mA SOT-23 marking 6W

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Product description
最大源漏极电压Vds
Drain-Source Voltage		25 V
栅源极击穿电压V(BR)GS
Gate-Source Voltage		25 V
漏极电流(Vgs=0V)IDSS
Drain Current		－7.0~－60.0mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage		3.0~6.0V
耗散功率Pd
Power Dissipation		225mW/0.225W
Description & ApplicationsP−Channel − Depletion MMBFJ175LT1 Features Pb−Free Package is Available
描述与应用P-通道 - 耗尽 MMBFJ175LT1 特点 无铅包装
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