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MMBFJ309LT1 JFET N-Channel 25v 12~30mA SOT-23 marking GU RF amplifier
| 最大源漏极电压Vds Drain-Source Voltage | 25v |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -25v |
| 漏极电流(Vgs=0V)IDSS Drain Current | 12~30ma |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -1~-4v |
| 耗散功率Pd Power Dissipation | 225mW/0.225W |
| Description & Applications | N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. |
| 描述与应用 | N沟道射频放大器 该设备是专为VHF/ UHF放大器，振荡器和混频器 的应用程序。共栅极放大器，16分贝在100 MHz和 12 dB，在450兆赫频率可以实现的。 |
