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MMBR931LT1 NPN Transistors(BJT) 10V 5mA 50~150 SOT-23/SC-59 marking 7D low noisehigh frequency transistor
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 10V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 5V |
集电极连续输出电流IC Collector Current(IC) | 5mA |
截止频率fT Transtion Frequency(fT) | |
直流电流增益hFE DC Current Gain(hFE) | 50~150 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | |
Description & Applications | The RF Line NPN Silicon High-Frequency TRANSISTOR Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This Motorola small–signal plastic transistor offers superior quality and performance at low cost. |
描述与应用 | RF线NPN硅 高频三极管 专为低噪声,宽动态范围前端放大器 低噪声VCO。可在一个表面贴装塑料包装。这 摩托罗拉的小信号的塑料晶体管提供优异的质量和性能 成本低。 |