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MMBR951LT1 NPN Transistors(BJT) 20V 100mA/0.1A 8Ghz 50~200 SOT-23/SC-59 marking 7Z low noisehigh frequency transistor
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 8Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | The RF Line NPN Silicon Low Noise High-Frequency TRANSISTOR Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 18 Finger, 1.25 Micron Geometry with Gold Top Metal • Gold Sintered Back Metal • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel |
| 描述与应用 | RF线NPN硅 低噪声高频三极管 设计用于在高增益，低噪声小信号放大器。该系列产品 具有良好的宽带线性，并提供多种封装。 •完全植入基极和发射极结构 •18个手指，1.25微米几何与黄金顶部的金属 •黄金背面金属烧结 •可在磁带和卷轴包装选择： T1后缀=3000单位每卷 |
