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MBT3946DW1T1G PNP+NPN Complex Bipolar Transistor -40V/60V -200mA/200mA 300 SOT-363/SC-88 marking 46 switch and digital circuit application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -40V/60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -40V/40V |
| 集电极连续输出电流IC Collector Current(IC) | -200mA/200mA |
| 截止频率fT Transtion Frequency(fT) | 250MHz/300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | -400mV/300mV |
| 耗散功率Pc Power Dissipation | 150mW |
| Description & Applications | Features • Dual General Purpose Transistors • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel • Device Marking: MBT3946DW1T1 = 46 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish |
| 描述与应用 | 特点 •双通用晶体管 •HFE，100-300 •低VCE（sat），≤0.4 V •简化电路设计 •缩小板级空间 •减少元件数量 •可在8毫米，7寸/3,000组带和卷轴 •器件标识：MBT3946DW1T1= 46 •无铅包装可能可用。 G-后缀表示一个Pb-Free无铅封装 |
