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MMBTA06 NPN Transistors(BJT) 80V 500mA/0.5A 100Mhz 100 250mV/0.25V SOT-23/SC-59 marking 1G general amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 80V |
集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
截止频率fT Transtion Frequency(fT) | 100Mhz |
直流电流增益hFE DC Current Gain(hFE) | 100 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 250mV/0.25V |
耗散功率Pc Power Dissipation | 350mW/0.35W |
Description & Applications | This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. |
描述与应用 | 这个装置是专为通用放大器应用 集电极电流为300毫安。 |