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MRF9511LT1 NPN Transistors(BJT) 20V 100mA/0.1A 9Ghz 75~150 SOT-143 marking 11H high gain ,low noisesmall signal amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
10V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
9Ghz
直流电流增益hFE
DC Current Gain(hFE)
75~150
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
322mW/0.322W
Description & Applications• The RF Line NPN Silicon Low Noise High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 18 Finger, 1.25 Micron Geometry with Gold Top Metal • Gold Sintered Back Metal • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel
描述与应用•RF线NPN硅高频低噪声晶体管 设计用于在高增益,低噪声小信号放大器。该系列产品 具有良好的宽带线性,并提供多种封装。 •完全植入基极和发射极结构 •18个手指,1.25微米几何与黄金顶部的金属 •黄金背面金属烧结 •可在磁带和卷轴包装选择: T1后缀=3000单位每卷
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