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MSB710-RT1 PNP transistors（BJT） -60V -500mA/-0.5A 120~240 -600mV/-0.6V SOT-23/SC-59 marking CR amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 120~240 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −600mV/-0.6V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP silicon general purpose amplifier Transistor |
| 描述与应用 | PNP硅通用晶体管放大器 |
