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MSD42WT1 NPN Transistors(BJT) 300V 150mA/0.15A 25~40 500mV/0.5V SOT-323/SC-70 marking 1D amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 300V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 300V |
| 集电极连续输出电流IC Collector Current(IC) | 150mA/0.15A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 25~40 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface mount applications. Pb−Free Package is Available |
| 描述与应用 | NPN硅一般 通用高电压 晶体管 这NPN硅平面晶体管是专为通用 放大器应用。这个装置是设在SC-70/SOT-323 SC-59封装，它是专为低功率表面贴装 的应用程序。 无铅包装是可用 |
