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MT3S07T NPN Transistors(BJT) 10V 25mA 10GHz~12GHz 70~140 SOT-623/TESM marking AD VHF-UHF band low noise amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
10V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
5V
集电极连续输出电流IC
Collector Current(IC)
25mA
截止频率fT
Transtion Frequency(fT)
10GHz~12GHz
直流电流增益hFE
DC Current Gain(hFE)
70~140
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
Description & ApplicationsVHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB (VCE = 3 V, IC = 5 mA, f = 2 GHz) • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz)
描述与应用VHF〜UHF频段低噪声放大器的应用 •低噪声系数:NF=1.5分贝(VCE=3 V,IC =5毫安,F =2吉赫) •高增益:S21E|2  =9.5分贝(VCE= 3 V,IC= 15 mA时,F= 2千兆赫)
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