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MT3S07T NPN Transistors(BJT) 10V 25mA 10GHz~12GHz 70~140 SOT-623/TESM marking AD VHF-UHF band low noise amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 10V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 5V |
| 集电极连续输出电流IC Collector Current(IC) | 25mA |
| 截止频率fT Transtion Frequency(fT) | 10GHz~12GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 70~140 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB (VCE = 3 V, IC = 5 mA, f = 2 GHz) • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) |
| 描述与应用 | VHF〜UHF频段低噪声放大器的应用 •低噪声系数：NF=1.5分贝（VCE=3 V，IC =5毫安，F =2吉赫） •高增益：S21E|2 =9.5分贝（VCE= 3 V，IC= 15 mA时，F= 2千兆赫） |
