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MT6C03AE NPN+NPN Complex Bipolar Transistor 10V 40mA HEF=80~160 10GHZ SOT-563/ES6 marking AM switch and digital circuit application VHF~UHF BAND LOW NOISE AMPLIFIER
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 10V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 5V |
| 集电极连续输出电流IC Collector Current(IC) | 40mA |
| 直流电流增益hFE DC Current Gain(hFE) | 80~160 |
| 截止频率fT Transtion Frequency(fT) | 10GHZ |
| 耗散功率Pc Power Dissipation | 0.1W |
| Description & Applications |
Features • Transistors silicon NPN Epitaxial Planar type • Two devices are built in to the super-thin and extreme super mini (6 pins) package:ES6 VHF~UHF BAND LOW NOISE AMPLIFIER 甚高频~ UHF波段低噪声放大器
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