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MTD2955VT4 MOSFET P-Channel 60V 1.2A 0.185ohm SOT-252 marking 955V
最大源漏极电压Vds Drain-Source Voltage | -60V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | -12A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.185Ω @6A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 2.0-4.0V |
耗散功率Pd Power Dissipation | 2.1W |
Description & Applications | Features • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Pb−Free Packages are Available |
描述与应用 | •雪崩能量 •IDSS和VDS(上) 指定高温 •无铅包可用 |