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NDS332P MOSFET P-Channel -20V -1A 0.035ohm SOT-23 marking 332 low on-resistance small package 4V drive
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.035Ω @-1A,-2.7V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4--1V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface Mount package. |
| 描述与应用 | 非常低的水平栅极驱动要求可直接 操作在3V电路。 VGS（TH）<1.0V。 专有包装设计采用铜引线框架的 卓越的热性能和电气性能。 高密度电池设计极低的RDS（ON） 卓越的导通电阻和最大DC电流能力。 紧凑型工业标准SOT-23表面贴装封装。 |
