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NDS356P MOSFET P-Channel -20V -1.1A 0.3ohm SOT-23 marking 356
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -1.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.3Ω @-1.1A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.8--2.5V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | Industry standard outline SOT-23 surface mount package using proprietary SuperSOT TM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability. |
| 描述与应用 | 行业标准外形SOT-23表面贴装封装 使用专有SuperSOT 设计卓越的TM-3 热性能和电气性能。 高密度电池设计极低的RDS（ON） 卓越的导通电阻和最大DC电流能力 |
